Physics and Technology of Semiconductor Devices

2022 Course Programme

Instructors

Dimitrios Tassis
  • Semiconductors under thermodynamic equilibrium conditions:
    Introduction, Energy bands in solids, doping in semiconductors, electrons and holes in semiconductors, electrical neutrality of space charge, mobility of electrons-holes, semiconductor conductivity.
  • Semiconductors under non-equilibrium conditions:
    Introduction, lifetime of carriers in excess, diffusion of carriers in semiconductors, continuity equation, applications of continuity equation.
  • Diode of p-n junction:
    Introduction, basic technology of semiconductor devices, correlation between energy band structure and electrostatic parameters, space charge region of abrupt p-n junction (thermal equilibrium, application of external bias), capacitance-voltage characteristics of p-n junction, current-voltage characteristics of p-n junction (forward bias, reverse bias), experimental I-V characteristics of p-n junction (tunneling, avalanche breakdown).
  • Metal/semiconductor contacts:
    Work-function of metals, Fermi level and Fermi-Dirac function in metals, work function and electron affinity of semiconductors, metal/semiconductor contact (Schottky diode) in thermal equilibrium, capacitance, I-V characteristics, ohmic contact.
  • Bipolar transistor:
    Principle of operation, current gain, input and output d.c. characteristics, common base and common emitter connection, applications.